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Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties

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Title: Grain-boundary types in chalcopyrite-type thin films and their correlations with film texture and electrical properties
Authors: Abou-Ras, D.1 daniel.abou-ras@hmi.de, Koch, C.T.2, Küstner, V.2, van Aken, P.A.2, Jahn, U.3, Contreras, M.A.4, Caballero, R.1, Kaufmann, C.A.1, Scheer, R.1, Unold, T.1, Schock, H.-W.1
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2545-2549. 5p.
Subjects: Electric properties of thin films, Chalcopyrite, Crystal grain boundaries, Crystal texture, Solar cells, Thin film devices, Cathodoluminescence, Transmission electron microscopy
Abstract: Abstract: Grain boundaries in chalcopyrite-type thin films can be divided into (near) Σ3 (twin) and random boundaries. It is shown that Σ3 grain boundaries in a 110/201-textured Cu(In,Ga)Se2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In,Ga)Se2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Σ3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Σ3 (twin) boundaries. [Copyright &y& Elsevier]
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Abstract:Abstract: Grain boundaries in chalcopyrite-type thin films can be divided into (near) Σ3 (twin) and random boundaries. It is shown that Σ3 grain boundaries in a 110/201-textured Cu(In,Ga)Se2 film may exhibit a preferential orientation perpendicular to the substrate, however, that this preferential orientation is not a common feature in 110/201-textured films. In general, it is not possible to draw conclusions about the Cu(In,Ga)Se2 thin-film microstructure based on its texture and vice versa. From cathodoluminescence and electron backscatter diffraction measurements acquired on the same area of a CuInS2 cross-section sample, it is concluded that the density of non-radiating recombination centers at random boundaries is substantially larger than that at Σ3 (twin) boundaries. Evaluation of reconstructed phase images from transmission electron microscopy focus series revealed considerably larger mean-inner potential wells at a random boundary as compared with Σ3 (twin) boundaries. [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2008.11.044