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Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells

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Title: Influence of grain boundaries on current collection in Cu(In,Ga)Se2 thin-film solar cells
Authors: Nichterwitz, M.1 melanie.nichterwitz@helmholtz-berlin.de, Abou-Ras, D.1, Sakurai, K.2, Bundesmann, J.1, Unold, T.1, Scheer, R.1, Schock, H.W.1
Source: Thin Solid Films. Feb2009, Vol. 517 Issue 7, p2554-2557. 4p.
Subjects: Crystal grain boundaries, Chalcopyrite, Solar cells, Electron backscattering, Electron beams, Scanning electron microscopes, Microstructure, Thin film devices
Abstract: Abstract: Electron backscatter diffraction (EBSD) in combination with electron beam-induced current (EBIC) measurements in a scanning electron microscope were used to investigate grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. The measurements were performed on polished cross sections of working devices. EBIC maps enable the analysis of charge-carrier collection with a high spatial resolution and the extraction of the local minority charge-carrier diffusion length. EBSD images reveal the microstructure of the Cu(In,Ga)Se2 absorber-layer. A combination of these techniques makes it possible to investigate the influence of the microstructure of the Cu(In,Ga)Se2 absorber-layer and especially of grain boundaries on charge-carrier collection. It is shown that collection properties are grain specific and that there are positions of grain boundaries exhibiting a reduced EBIC signal. These grain boundaries might be regions of enhanced recombination with a recombination velocity of about 1×104 cm/s. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: Electron backscatter diffraction (EBSD) in combination with electron beam-induced current (EBIC) measurements in a scanning electron microscope were used to investigate grain boundaries in Cu(In,Ga)Se2 thin-film solar cells. The measurements were performed on polished cross sections of working devices. EBIC maps enable the analysis of charge-carrier collection with a high spatial resolution and the extraction of the local minority charge-carrier diffusion length. EBSD images reveal the microstructure of the Cu(In,Ga)Se2 absorber-layer. A combination of these techniques makes it possible to investigate the influence of the microstructure of the Cu(In,Ga)Se2 absorber-layer and especially of grain boundaries on charge-carrier collection. It is shown that collection properties are grain specific and that there are positions of grain boundaries exhibiting a reduced EBIC signal. These grain boundaries might be regions of enhanced recombination with a recombination velocity of about 1×104 cm/s. [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2008.11.064