Large disparity between gallium and antimony self-diffusion in gallium antimonide.

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Bibliographic Details
Title:	Large disparity between gallium and antimony self-diffusion in gallium antimonide.
Authors:	Bracht, H., Nicols, S.P., Walukiewicz, W., Silveira, J.P., Briones, F., Haller, E.E.
Source:	Nature. 11/2/2000, Vol. 408 Issue 6808, p69. 4p. 4 Graphs.
Subjects:	Diffusion, Semiconductor diffusion, Electronics, Gallium, Antimony
Abstract:	Reports on self-diffusion studies with an isotropically controlled multilayer structure of crystalline gallium antimonide (GaSb). Experiments on the diffusion rates of gallium (Ga) and antimony (Sb) which showed that near the melting temperature Ga diffuses more rapidly; Suggestion that slow diffusion of Sb in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices; How the diffusion of semiconductors is central to the development of advanced electronic devices.
Database:	Engineering Source

Description
Abstract:	Reports on self-diffusion studies with an isotropically controlled multilayer structure of crystalline gallium antimonide (GaSb). Experiments on the diffusion rates of gallium (Ga) and antimony (Sb) which showed that near the melting temperature Ga diffuses more rapidly; Suggestion that slow diffusion of Sb in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices; How the diffusion of semiconductors is central to the development of advanced electronic devices.
ISSN:	00280836
DOI:	10.1038/35040526