Large disparity between gallium and antimony self-diffusion in gallium antimonide.
Saved in:
| Title: | Large disparity between gallium and antimony self-diffusion in gallium antimonide. |
|---|---|
| Authors: | Bracht, H., Nicols, S.P., Walukiewicz, W., Silveira, J.P., Briones, F., Haller, E.E. |
| Source: | Nature. 11/2/2000, Vol. 408 Issue 6808, p69. 4p. 4 Graphs. |
| Subjects: | Diffusion, Semiconductor diffusion, Electronics, Gallium, Antimony |
| Abstract: | Reports on self-diffusion studies with an isotropically controlled multilayer structure of crystalline gallium antimonide (GaSb). Experiments on the diffusion rates of gallium (Ga) and antimony (Sb) which showed that near the melting temperature Ga diffuses more rapidly; Suggestion that slow diffusion of Sb in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices; How the diffusion of semiconductors is central to the development of advanced electronic devices. |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
|---|---|
| Header | DbId: egs DbLabel: Engineering Source An: 3738752 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Large disparity between gallium and antimony self-diffusion in gallium antimonide. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Bracht%2C+H%2E%22">Bracht, H.</searchLink><br /><searchLink fieldCode="AR" term="%22Nicols%2C+S%2EP%2E%22">Nicols, S.P.</searchLink><br /><searchLink fieldCode="AR" term="%22Walukiewicz%2C+W%2E%22">Walukiewicz, W.</searchLink><br /><searchLink fieldCode="AR" term="%22Silveira%2C+J%2EP%2E%22">Silveira, J.P.</searchLink><br /><searchLink fieldCode="AR" term="%22Briones%2C+F%2E%22">Briones, F.</searchLink><br /><searchLink fieldCode="AR" term="%22Haller%2C+E%2EE%2E%22">Haller, E.E.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Nature%22">Nature</searchLink>. 11/2/2000, Vol. 408 Issue 6808, p69. 4p. 4 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Electronics%22">Electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Gallium%22">Gallium</searchLink><br /><searchLink fieldCode="DE" term="%22Antimony%22">Antimony</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Reports on self-diffusion studies with an isotropically controlled multilayer structure of crystalline gallium antimonide (GaSb). Experiments on the diffusion rates of gallium (Ga) and antimony (Sb) which showed that near the melting temperature Ga diffuses more rapidly; Suggestion that slow diffusion of Sb in GaSb is a consequence of reactions between defects on the Ga and Sb sublattices; How the diffusion of semiconductors is central to the development of advanced electronic devices. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=3738752 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/35040526 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 69 Subjects: – SubjectFull: Diffusion Type: general – SubjectFull: Semiconductor diffusion Type: general – SubjectFull: Electronics Type: general – SubjectFull: Gallium Type: general – SubjectFull: Antimony Type: general Titles: – TitleFull: Large disparity between gallium and antimony self-diffusion in gallium antimonide. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bracht, H. – PersonEntity: Name: NameFull: Nicols, S.P. – PersonEntity: Name: NameFull: Walukiewicz, W. – PersonEntity: Name: NameFull: Silveira, J.P. – PersonEntity: Name: NameFull: Briones, F. – PersonEntity: Name: NameFull: Haller, E.E. IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 11 Text: 11/2/2000 Type: published Y: 2000 Identifiers: – Type: issn-print Value: 00280836 Numbering: – Type: volume Value: 408 – Type: issue Value: 6808 Titles: – TitleFull: Nature Type: main |
| ResultId | 1 |