Bibliographic Details
| Title: |
A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power. |
| Authors: |
Johansson, T., Soderstrom, J., Eastman, L. F., Woodard, D. W. |
| Source: |
International Journal of Electronics. Apr2000, Vol. 87 Issue 4, p497-510. 14p. |
| Subjects: |
Bipolar transistors, Cellular mappings (Mathematics) |
| Abstract: |
The feasibility of GaAlAs/GaAs heterojunction bipolar transistors as power output transistors for 24-28 V cellular base station applications was studied. A 1 W, 25 V test vehicle was fabricated, with predictable and uniform electrical parameters. Maximum output power was 1.02 W with 9.1 dB gain at 2GHz and 18 V supply voltage. Characterization at more than 22 V destroyed all devices, even if emitter ballasting resistors were used for thermal balance. Analysis indicated that the failures were caused by too wide emitters in combination with the high supply voltage, causing current crowding and large temperature spikes. Small (< 2-3 mum) horizontal emitter dimensions are required even with low base sheet resistivity, otherwise leading to destructive temperature non-uniformities, unless special arrangements to drastically reduce the thermal resistance can be applied. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
