An analysis of a kick-out diffusion mechanism with charge effects.
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| Title: | An analysis of a kick-out diffusion mechanism with charge effects. |
|---|---|
| Authors: | Meere, MG |
| Source: | Quarterly Journal of Mechanics & Applied Mathematics. Nov98, Vol. 51 Issue 4, p515. 27p. |
| Subjects: | Impurity distribution in semiconductors, Semiconductor diffusion |
| Abstract: | In this paper we analyse a kick-out model for impurity diffusion in compound semiconductors. The form for the model described here has not previously appeared in the literature. The substitutional impurities are fixed to be singly negatively charged while the self-interstitials are taken to be neutral. The charge on the interstitial impurity atoms can take any integer value. Both one- and two-dimensional in-diffusion problems are studied. It is found that the impurity diffusion is quite sensitive to the charge on the impurity interstitials. [ABSTRACT FROM AUTHOR] |
| Copyright of Quarterly Journal of Mechanics & Applied Mathematics is the property of Oxford University Press / USA and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 4337521 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: An analysis of a kick-out diffusion mechanism with charge effects. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Meere%2C+MG%22">Meere, MG</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Quarterly+Journal+of+Mechanics+%26+Applied+Mathematics%22">Quarterly Journal of Mechanics & Applied Mathematics</searchLink>. Nov98, Vol. 51 Issue 4, p515. 27p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Impurity+distribution+in+semiconductors%22">Impurity distribution in semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diffusion%22">Semiconductor diffusion</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this paper we analyse a kick-out model for impurity diffusion in compound semiconductors. The form for the model described here has not previously appeared in the literature. The substitutional impurities are fixed to be singly negatively charged while the self-interstitials are taken to be neutral. The charge on the interstitial impurity atoms can take any integer value. Both one- and two-dimensional in-diffusion problems are studied. It is found that the impurity diffusion is quite sensitive to the charge on the impurity interstitials. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Quarterly Journal of Mechanics & Applied Mathematics is the property of Oxford University Press / USA and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1093/qjmam/51.4.515 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 27 StartPage: 515 Subjects: – SubjectFull: Impurity distribution in semiconductors Type: general – SubjectFull: Semiconductor diffusion Type: general Titles: – TitleFull: An analysis of a kick-out diffusion mechanism with charge effects. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Meere, MG IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov98 Type: published Y: 1998 Identifiers: – Type: issn-print Value: 00335614 Numbering: – Type: volume Value: 51 – Type: issue Value: 4 Titles: – TitleFull: Quarterly Journal of Mechanics & Applied Mathematics Type: main |
| ResultId | 1 |
