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Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.

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Bibliographic Details
Title: Jet ECD planting and seed layers for sub-0.10mum Cu interconnects.
Authors: Cohen, Uri, Tzanavaras, George
Source: Solid State Technology. May2001, Vol. 44 Issue 5, p61. 5p. 1 Color Photograph, 1 Black and White Photograph, 5 Diagrams, 1 Graph.
Subjects: Electroplating, Electrochemical metallizing
Abstract: Presents an inhibition model which explains the mechanism and the beneficial effects of Jet electrochemical deposition plating. Problems with conventional physical vapor deposition and chemical vapor deposition seed layers; Details on the plating inhibition model; Information on conventional Cu seed layers.
Database: Engineering Source
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Description
Abstract:Presents an inhibition model which explains the mechanism and the beneficial effects of Jet electrochemical deposition plating. Problems with conventional physical vapor deposition and chemical vapor deposition seed layers; Details on the plating inhibition model; Information on conventional Cu seed layers.
ISSN:0038111X