Bibliographic Details
| Title: |
Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling. |
| Authors: |
Kettle, J.1 jeffrey.kettle@manchester.ac.uk, Whitelegg, S.2, Song, A. M.2 a.song@manchester.ac.uk, Madec, M. B.3, Yeates, S.3, Turner, M. L.3, Kotacka, Libor4, Kolarik, Vladimir5 |
| Source: |
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Nov2009, Vol. 27 Issue 6, p2801-2804. 4p. 1 Black and White Photograph, 1 Diagram, 1 Graph. |
| Subjects: |
Switching diodes, Lithography, Argon, Semiconductor diodes, Semiconductor switches |
| Abstract: |
In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
