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Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.

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Title: Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
Authors: Kettle, J.1 jeffrey.kettle@manchester.ac.uk, Whitelegg, S.2, Song, A. M.2 a.song@manchester.ac.uk, Madec, M. B.3, Yeates, S.3, Turner, M. L.3, Kotacka, Libor4, Kolarik, Vladimir5
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures. Nov2009, Vol. 27 Issue 6, p2801-2804. 4p. 1 Black and White Photograph, 1 Diagram, 1 Graph.
Subjects: Switching diodes, Lithography, Argon, Semiconductor diodes, Semiconductor switches
Abstract: In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range. [ABSTRACT FROM AUTHOR]
Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 46745496
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
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  Data: <searchLink fieldCode="AR" term="%22Kettle%2C+J%2E%22">Kettle, J.</searchLink><relatesTo>1</relatesTo><i> jeffrey.kettle@manchester.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Whitelegg%2C+S%2E%22">Whitelegg, S.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Song%2C+A%2E+M%2E%22">Song, A. M.</searchLink><relatesTo>2</relatesTo><i> a.song@manchester.ac.uk</i><br /><searchLink fieldCode="AR" term="%22Madec%2C+M%2E+B%2E%22">Madec, M. B.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Yeates%2C+S%2E%22">Yeates, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Turner%2C+M%2E+L%2E%22">Turner, M. L.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Kotacka%2C+Libor%22">Kotacka, Libor</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Kolarik%2C+Vladimir%22">Kolarik, Vladimir</searchLink><relatesTo>5</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Vacuum+Science+%26+Technology%3A+Part+B-Microelectronics+%26+Nanometer+Structures%22">Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures</searchLink>. Nov2009, Vol. 27 Issue 6, p2801-2804. 4p. 1 Black and White Photograph, 1 Diagram, 1 Graph.
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  Data: <searchLink fieldCode="DE" term="%22Switching+diodes%22">Switching diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Argon%22">Argon</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+diodes%22">Semiconductor diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+switches%22">Semiconductor switches</searchLink>
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  Label: Abstract
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  Data: In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures is the property of American Institute of Physics and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Argon
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      – TitleFull: Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
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              Text: Nov2009
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