Bibliographic Details
| Title: |
Study on the dynamic resistance switching properties of NiO thin films |
| Authors: |
Kügeler, C.1 c.kuegeler@fz-juelich.de, Weng, R.1, Schroeder, H.1, Symanczyk, R.2, Majewski, P.2, Ufert, K.-D.2, Waser, R.1,3, Kund, M.2 |
| Source: |
Thin Solid Films. Feb2010, Vol. 518 Issue 8, p2258-2260. 3p. |
| Subjects: |
Electric properties of thin films, Metallic oxides, Nickel compounds, Ferroelectric RAM, Random access memory, Electronic structure |
| Abstract: |
Abstract: The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a storage contact size of 150nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300ns) and reliable switching performance at low operating voltages (<2.5V). Promising results of endurance data (>1000cycles) and retention tests up to 110°C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
