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Study on the dynamic resistance switching properties of NiO thin films

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Title: Study on the dynamic resistance switching properties of NiO thin films
Authors: Kügeler, C.1 c.kuegeler@fz-juelich.de, Weng, R.1, Schroeder, H.1, Symanczyk, R.2, Majewski, P.2, Ufert, K.-D.2, Waser, R.1,3, Kund, M.2
Source: Thin Solid Films. Feb2010, Vol. 518 Issue 8, p2258-2260. 3p.
Subjects: Electric properties of thin films, Metallic oxides, Nickel compounds, Ferroelectric RAM, Random access memory, Electronic structure
Abstract: Abstract: The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a storage contact size of 150nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (<300ns) and reliable switching performance at low operating voltages (<2.5V). Promising results of endurance data (>1000cycles) and retention tests up to 110°C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 47609129
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Study on the dynamic resistance switching properties of NiO thin films
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22K&#252;geler%2C+C%2E%22&quot;&gt;K&#252;geler, C.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;i&gt; c.kuegeler@fz-juelich.de&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Weng%2C+R%2E%22&quot;&gt;Weng, R.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Schroeder%2C+H%2E%22&quot;&gt;Schroeder, H.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Symanczyk%2C+R%2E%22&quot;&gt;Symanczyk, R.&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Majewski%2C+P%2E%22&quot;&gt;Majewski, P.&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Ufert%2C+K%2E-D%2E%22&quot;&gt;Ufert, K.-D.&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Waser%2C+R%2E%22&quot;&gt;Waser, R.&lt;/searchLink&gt;&lt;relatesTo&gt;1,3&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Kund%2C+M%2E%22&quot;&gt;Kund, M.&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt;
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Thin+Solid+Films%22&quot;&gt;Thin Solid Films&lt;/searchLink&gt;. Feb2010, Vol. 518 Issue 8, p2258-2260. 3p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electric+properties+of+thin+films%22&quot;&gt;Electric properties of thin films&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Metallic+oxides%22&quot;&gt;Metallic oxides&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Nickel+compounds%22&quot;&gt;Nickel compounds&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Ferroelectric+RAM%22&quot;&gt;Ferroelectric RAM&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Random+access+memory%22&quot;&gt;Random access memory&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Electronic+structure%22&quot;&gt;Electronic structure&lt;/searchLink&gt;
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  Data: Abstract: The resistive switching properties of NiO-based memory cells were investigated utilizing test structures with a storage contact size of 150nm in diameter. Two well defined stable resistance states with high OFF/ON ratios were achieved by unipolar operation. Detailed electrical characterizations with respect to nonvolatile memory applications reveal fast (&lt;300ns) and reliable switching performance at low operating voltages (&lt;2.5V). Promising results of endurance data (&gt;1000cycles) and retention tests up to 110&#176;C show excellent stability and indicate the competitive potential with respect to established nonvolatile memory devices. [Copyright &amp;y&amp; Elsevier]
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  Data: &lt;i&gt;Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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        Value: 10.1016/j.tsf.2009.10.040
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 2258
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      – SubjectFull: Electric properties of thin films
        Type: general
      – SubjectFull: Metallic oxides
        Type: general
      – SubjectFull: Nickel compounds
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      – SubjectFull: Ferroelectric RAM
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      – SubjectFull: Random access memory
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      – SubjectFull: Electronic structure
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      – TitleFull: Study on the dynamic resistance switching properties of NiO thin films
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              Text: Feb2010
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              Y: 2010
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