Bibliographic Details
| Title: |
Dry fabrication process for heterojunction solar cells through in-situ plasma cleaning and passivation |
| Authors: |
Moreno, M.1 mario.moreno@polytechnique.edu, Labrune, M.1,2, Roca i Cabarrocas, P.1 |
| Source: |
Solar Energy Materials & Solar Cells. Mar2010, Vol. 94 Issue 3, p402-405. 4p. |
| Subjects: |
Microfabrication, Heterojunctions, Ellipsometry, Solar cells, Cleaning, Surfaces (Technology), Low temperatures, Semiconductor wafers, Plasma-enhanced chemical vapor deposition |
| Abstract: |
Abstract: We have studied low temperature plasma processes (T sub≤200°C) for the efficient cleaning and passivation of c-Si wafers, aiming for fully dry fabrication of heterojunction solar cells. We have experimented with H2–SiF4 plasmas in a standard RF PECVD reactor in order to etch the native oxide from the c-Si wafer and a thin a-Si:H layer was deposited from SiH4 to passivate the c-Si surface. In-situ ellipsometry was used to optimize the process conditions for an efficient surface cleaning. Various plasma treatments were performed before a-Si:H deposition in order to reduce the surface recombination. Optimized process conditions resulted in high effective lifetime values (τ eff≈1.55ms), low effective surface recombination velocities (S eff≤9cms−1) and high implicit open circuit voltages (V oc≈0.713V). [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
