Bibliographic Details
| Title: |
60 GHz high resistivity silicon on insulator interdigitated dipole antenna. |
| Authors: |
Barakat, M. H.1,2 Moussa.barakat@gmail.com, Delaveaud, C.2, Ndagijimana, F.1 |
| Source: |
Microwave & Optical Technology Letters. May2010, Vol. 52 Issue 5, p1197-1201. 5p. 1 Color Photograph, 8 Graphs. |
| Subjects: |
Silicon-on-insulator technology, Silicon, Dipole antennas, Waveguides, Antennas (Electronics) |
| Abstract: |
The performance of a 60 GHz interdigitated dipole antenna integrated on SOI is described. The SOI substrate effect has been compensated by the introduction of an interdigitated structure. Good dipole matching impedance at 60 GHz over a bandwidth of 8% is obtained. Backside substrate metallization has been used to improve the radiation properties. A novel test method is used to measure the gain patterns of the dipole. The resulting measured radiation efficiency is 80% with a gain around 3 dBi at 60 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1197–1201, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25132 [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
