60 GHz high resistivity silicon on insulator interdigitated dipole antenna.
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| Title: | 60 GHz high resistivity silicon on insulator interdigitated dipole antenna. |
|---|---|
| Authors: | Barakat, M. H.1,2 Moussa.barakat@gmail.com, Delaveaud, C.2, Ndagijimana, F.1 |
| Source: | Microwave & Optical Technology Letters. May2010, Vol. 52 Issue 5, p1197-1201. 5p. 1 Color Photograph, 8 Graphs. |
| Subjects: | Silicon-on-insulator technology, Silicon, Dipole antennas, Waveguides, Antennas (Electronics) |
| Abstract: | The performance of a 60 GHz interdigitated dipole antenna integrated on SOI is described. The SOI substrate effect has been compensated by the introduction of an interdigitated structure. Good dipole matching impedance at 60 GHz over a bandwidth of 8% is obtained. Backside substrate metallization has been used to improve the radiation properties. A novel test method is used to measure the gain patterns of the dipole. The resulting measured radiation efficiency is 80% with a gain around 3 dBi at 60 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1197–1201, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25132 [ABSTRACT FROM AUTHOR] |
| Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 48490604 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: 60 GHz high resistivity silicon on insulator interdigitated dipole antenna. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Barakat%2C+M%2E+H%2E%22">Barakat, M. H.</searchLink><relatesTo>1,2</relatesTo><i> Moussa.barakat@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Delaveaud%2C+C%2E%22">Delaveaud, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Ndagijimana%2C+F%2E%22">Ndagijimana, F.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Microwave+%26+Optical+Technology+Letters%22">Microwave & Optical Technology Letters</searchLink>. May2010, Vol. 52 Issue 5, p1197-1201. 5p. 1 Color Photograph, 8 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Dipole+antennas%22">Dipole antennas</searchLink><br /><searchLink fieldCode="DE" term="%22Waveguides%22">Waveguides</searchLink><br /><searchLink fieldCode="DE" term="%22Antennas+%28Electronics%29%22">Antennas (Electronics)</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The performance of a 60 GHz interdigitated dipole antenna integrated on SOI is described. The SOI substrate effect has been compensated by the introduction of an interdigitated structure. Good dipole matching impedance at 60 GHz over a bandwidth of 8% is obtained. Backside substrate metallization has been used to improve the radiation properties. A novel test method is used to measure the gain patterns of the dipole. The resulting measured radiation efficiency is 80% with a gain around 3 dBi at 60 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1197–1201, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25132 [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Microwave & Optical Technology Letters is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/mop.25132 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 1197 Subjects: – SubjectFull: Silicon-on-insulator technology Type: general – SubjectFull: Silicon Type: general – SubjectFull: Dipole antennas Type: general – SubjectFull: Waveguides Type: general – SubjectFull: Antennas (Electronics) Type: general Titles: – TitleFull: 60 GHz high resistivity silicon on insulator interdigitated dipole antenna. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Barakat, M. H. – PersonEntity: Name: NameFull: Delaveaud, C. – PersonEntity: Name: NameFull: Ndagijimana, F. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 05 Text: May2010 Type: published Y: 2010 Identifiers: – Type: issn-print Value: 08952477 Numbering: – Type: volume Value: 52 – Type: issue Value: 5 Titles: – TitleFull: Microwave & Optical Technology Letters Type: main |
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