Bibliographic Details
| Title: |
Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel |
| Authors: |
Liu, Li-Jung1, Chang-Liao, Kuei-Shu Lkschang@ess.nthu.edu.tw, Keng, Wen-Chun1, Wang, Tien-Ko1 |
| Source: |
Solid-State Electronics. Oct2010, Vol. 54 Issue 10, p1113-1118. 6p. |
| Subjects: |
Flash memory, Ion channels, Silicon compounds, Secondary ion mass spectrometry, Electric charge, Diffusion, Mass spectrometry, Random access memory, Active biological transport |
| Abstract: |
Abstract: SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operating characteristics of charge-trapping (CT) flash devices were studied in this work. The results show that the programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. Enhancement up to merely 20 times on programming speed was achieved. The retention characteristics of flash devices are satisfactory with suitable Ge content in SiGe buried channel and thickness of Si-cap layer. From the measurement of secondary ion mass spectroscopy, the operation characteristics of flash devices with SiGe channel were sensitive to the distribution of Ge atoms. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
