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Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel

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Title: Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel
Authors: Liu, Li-Jung1, Chang-Liao, Kuei-Shu Lkschang@ess.nthu.edu.tw, Keng, Wen-Chun1, Wang, Tien-Ko1
Source: Solid-State Electronics. Oct2010, Vol. 54 Issue 10, p1113-1118. 6p.
Subjects: Flash memory, Ion channels, Silicon compounds, Secondary ion mass spectrometry, Electric charge, Diffusion, Mass spectrometry, Random access memory, Active biological transport
Abstract: Abstract: SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operating characteristics of charge-trapping (CT) flash devices were studied in this work. The results show that the programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. Enhancement up to merely 20 times on programming speed was achieved. The retention characteristics of flash devices are satisfactory with suitable Ge content in SiGe buried channel and thickness of Si-cap layer. From the measurement of secondary ion mass spectroscopy, the operation characteristics of flash devices with SiGe channel were sensitive to the distribution of Ge atoms. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 52579220
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
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  Data: Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel
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  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><i> Lkschang@ess.nthu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Keng%2C+Wen-Chun%22">Keng, Wen-Chun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Oct2010, Vol. 54 Issue 10, p1113-1118. 6p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+channels%22">Ion channels</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+compounds%22">Silicon compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+charge%22">Electric charge</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Mass+spectrometry%22">Mass spectrometry</searchLink><br /><searchLink fieldCode="DE" term="%22Random+access+memory%22">Random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Active+biological+transport%22">Active biological transport</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: SiGe buried channel with different Ge contents and various thicknesses of Si-cap layer on operating characteristics of charge-trapping (CT) flash devices were studied in this work. The results show that the programming and erasing speeds of CT flash devices are significantly improved by employing SiGe buried channel. Enhancement up to merely 20 times on programming speed was achieved. The retention characteristics of flash devices are satisfactory with suitable Ge content in SiGe buried channel and thickness of Si-cap layer. From the measurement of secondary ion mass spectroscopy, the operation characteristics of flash devices with SiGe channel were sensitive to the distribution of Ge atoms. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.sse.2010.05.004
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 1113
    Subjects:
      – SubjectFull: Flash memory
        Type: general
      – SubjectFull: Ion channels
        Type: general
      – SubjectFull: Silicon compounds
        Type: general
      – SubjectFull: Secondary ion mass spectrometry
        Type: general
      – SubjectFull: Electric charge
        Type: general
      – SubjectFull: Diffusion
        Type: general
      – SubjectFull: Mass spectrometry
        Type: general
      – SubjectFull: Random access memory
        Type: general
      – SubjectFull: Active biological transport
        Type: general
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      – TitleFull: Improvement on programming and erasing speeds for charge-trapping flash memory device with SiGe buried channel
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            NameFull: Chang-Liao, Kuei-Shu
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            NameFull: Keng, Wen-Chun
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              Text: Oct2010
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              Y: 2010
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