Bibliographic Details
| Title: |
InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f\tau/f\max \sim \430/800\ \GHz. |
| Authors: |
Jain, Vibhor1, Lobisser, Evan1, Baraskar, Ashish1, Thibeault, Brian J.1, Rodwell, Mark J. W.1, Griffith, Z.2, Urteaga, M.2, Loubychev, D.3, Snyder, A.3, Wu, Y.4, Fastenau, J. M.3, Liu, W. K.4 |
| Source: |
IEEE Electron Device Letters. 01/01/2011, Vol. 32 Issue 1, p24-26. 3p. |
| Subjects: |
Bipolar transistors, Heterojunctions, Indium phosphide, Heat resistant alloys, Microfabrication, Plasma etching, Electric lines, Radio frequency |
| Abstract: |
We report an \InP/In0.53\Ga0.47\As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f\tau and 800-GHz f \max. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter–base junctions. At peak RF performance, the device is operating at 30 \mW/\mu\m^2 with Jc = \18.4\ \mA/\mu\m^{2} and Vce = \1.64\ \V. The devices show a peak DC common-emitter current gain (\beta) \sim \20 and VBR, {CEO} = \2.5\ \V. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
