View in EDS

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f\tau/f\max \sim \430/800\ \GHz.

Saved in:
Bibliographic Details
Title: InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f\tau/f\max \sim \430/800\ \GHz.
Authors: Jain, Vibhor1, Lobisser, Evan1, Baraskar, Ashish1, Thibeault, Brian J.1, Rodwell, Mark J. W.1, Griffith, Z.2, Urteaga, M.2, Loubychev, D.3, Snyder, A.3, Wu, Y.4, Fastenau, J. M.3, Liu, W. K.4
Source: IEEE Electron Device Letters. 01/01/2011, Vol. 32 Issue 1, p24-26. 3p.
Subjects: Bipolar transistors, Heterojunctions, Indium phosphide, Heat resistant alloys, Microfabrication, Plasma etching, Electric lines, Radio frequency
Abstract: We report an \InP/In0.53\Ga0.47\As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f\tau and 800-GHz f \max. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter–base junctions. At peak RF performance, the device is operating at 30 \mW/\mu\m^2 with Jc = \18.4\ \mA/\mu\m^{2} and Vce = \1.64\ \V. The devices show a peak DC common-emitter current gain (\beta) \sim \20 and VBR, {CEO} = \2.5\ \V. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 57252363
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f\tau/f\max \sim \430/800\ \GHz.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Jain%2C+Vibhor%22">Jain, Vibhor</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lobisser%2C+Evan%22">Lobisser, Evan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Baraskar%2C+Ashish%22">Baraskar, Ashish</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Thibeault%2C+Brian+J%2E%22">Thibeault, Brian J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Rodwell%2C+Mark+J%2E+W%2E%22">Rodwell, Mark J. W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Griffith%2C+Z%2E%22">Griffith, Z.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Urteaga%2C+M%2E%22">Urteaga, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Loubychev%2C+D%2E%22">Loubychev, D.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Snyder%2C+A%2E%22">Snyder, A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Wu%2C+Y%2E%22">Wu, Y.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Fastenau%2C+J%2E+M%2E%22">Fastenau, J. M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Liu%2C+W%2E+K%2E%22">Liu, W. K.</searchLink><relatesTo>4</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. 01/01/2011, Vol. 32 Issue 1, p24-26. 3p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Bipolar+transistors%22">Bipolar transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Heterojunctions%22">Heterojunctions</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+phosphide%22">Indium phosphide</searchLink><br /><searchLink fieldCode="DE" term="%22Heat+resistant+alloys%22">Heat resistant alloys</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Plasma+etching%22">Plasma etching</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+lines%22">Electric lines</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: We report an \InP/In0.53\Ga0.47\As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz f\tau and 800-GHz f \max. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide emitter–base junctions. At peak RF performance, the device is operating at 30 \mW/\mu\m^2 with Jc = \18.4\ \mA/\mu\m^{2} and Vce = \1.64\ \V. The devices show a peak DC common-emitter current gain (\beta) \sim \20 and VBR, {CEO} = \2.5\ \V. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=57252363
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2010.2084069
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 3
        StartPage: 24
    Subjects:
      – SubjectFull: Bipolar transistors
        Type: general
      – SubjectFull: Heterojunctions
        Type: general
      – SubjectFull: Indium phosphide
        Type: general
      – SubjectFull: Heat resistant alloys
        Type: general
      – SubjectFull: Microfabrication
        Type: general
      – SubjectFull: Plasma etching
        Type: general
      – SubjectFull: Electric lines
        Type: general
      – SubjectFull: Radio frequency
        Type: general
    Titles:
      – TitleFull: InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f\tau/f\max \sim \430/800\ \GHz.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Jain, Vibhor
      – PersonEntity:
          Name:
            NameFull: Lobisser, Evan
      – PersonEntity:
          Name:
            NameFull: Baraskar, Ashish
      – PersonEntity:
          Name:
            NameFull: Thibeault, Brian J.
      – PersonEntity:
          Name:
            NameFull: Rodwell, Mark J. W.
      – PersonEntity:
          Name:
            NameFull: Griffith, Z.
      – PersonEntity:
          Name:
            NameFull: Urteaga, M.
      – PersonEntity:
          Name:
            NameFull: Loubychev, D.
      – PersonEntity:
          Name:
            NameFull: Snyder, A.
      – PersonEntity:
          Name:
            NameFull: Wu, Y.
      – PersonEntity:
          Name:
            NameFull: Fastenau, J. M.
      – PersonEntity:
          Name:
            NameFull: Liu, W. K.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: 01/01/2011
              Type: published
              Y: 2011
          Identifiers:
            – Type: issn-print
              Value: 07413106
          Numbering:
            – Type: volume
              Value: 32
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: IEEE Electron Device Letters
              Type: main
ResultId 1