Bibliographic Details
| Title: |
Spark protection layers for CMOS pixel anode chips in MPGDs |
| Authors: |
Bilevych, Y.1, Blanco Carballo, V.M.1,2, Chefdeville, M.1, Colas, P.3, Delagnes, E.3, Fransen, M.1, van der Graaf, H.1 vdgraaf@nikhef.nl, Koppert, W.J.C.1, Melai, J.2, Salm, C.2, Schmitz, J.2, Timmermans, J.1, Wyrsch, N.4 |
| Source: |
Nuclear Instruments & Methods in Physics Research Section A. Feb2011, Vol. 629 Issue 1, p66-73. 8p. |
| Subjects: |
Gas detectors, Sparks, Complementary metal oxide semiconductors, Pixels, Anodes, Amorphous substances, Silicon nitride, Electric discharges, Nuclear counters |
| Abstract: |
Abstract: In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |