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Spark protection layers for CMOS pixel anode chips in MPGDs

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Title: Spark protection layers for CMOS pixel anode chips in MPGDs
Authors: Bilevych, Y.1, Blanco Carballo, V.M.1,2, Chefdeville, M.1, Colas, P.3, Delagnes, E.3, Fransen, M.1, van der Graaf, H.1 vdgraaf@nikhef.nl, Koppert, W.J.C.1, Melai, J.2, Salm, C.2, Schmitz, J.2, Timmermans, J.1, Wyrsch, N.4
Source: Nuclear Instruments & Methods in Physics Research Section A. Feb2011, Vol. 629 Issue 1, p66-73. 8p.
Subjects: Gas detectors, Sparks, Complementary metal oxide semiconductors, Pixels, Anodes, Amorphous substances, Silicon nitride, Electric discharges, Nuclear counters
Abstract: Abstract: In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges. [ABSTRACT FROM AUTHOR]
Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 57514852
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Spark protection layers for CMOS pixel anode chips in MPGDs
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  Data: <searchLink fieldCode="AR" term="%22Bilevych%2C+Y%2E%22">Bilevych, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Blanco+Carballo%2C+V%2EM%2E%22">Blanco Carballo, V.M.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Chefdeville%2C+M%2E%22">Chefdeville, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Colas%2C+P%2E%22">Colas, P.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Delagnes%2C+E%2E%22">Delagnes, E.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Fransen%2C+M%2E%22">Fransen, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22van+der+Graaf%2C+H%2E%22">van der Graaf, H.</searchLink><relatesTo>1</relatesTo><i> vdgraaf@nikhef.nl</i><br /><searchLink fieldCode="AR" term="%22Koppert%2C+W%2EJ%2EC%2E%22">Koppert, W.J.C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Melai%2C+J%2E%22">Melai, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Salm%2C+C%2E%22">Salm, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Schmitz%2C+J%2E%22">Schmitz, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Timmermans%2C+J%2E%22">Timmermans, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wyrsch%2C+N%2E%22">Wyrsch, N.</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+A%22">Nuclear Instruments & Methods in Physics Research Section A</searchLink>. Feb2011, Vol. 629 Issue 1, p66-73. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Gas+detectors%22">Gas detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Sparks%22">Sparks</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Pixels%22">Pixels</searchLink><br /><searchLink fieldCode="DE" term="%22Anodes%22">Anodes</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+substances%22">Amorphous substances</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+discharges%22">Electric discharges</searchLink><br /><searchLink fieldCode="DE" term="%22Nuclear+counters%22">Nuclear counters</searchLink>
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  Data: Abstract: In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs). When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layers up to 10μm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix2 chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section A is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=57514852
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        Value: 10.1016/j.nima.2010.11.116
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        Text: English
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        PageCount: 8
        StartPage: 66
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        Type: general
      – SubjectFull: Sparks
        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Pixels
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      – SubjectFull: Anodes
        Type: general
      – SubjectFull: Amorphous substances
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      – SubjectFull: Silicon nitride
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      – SubjectFull: Nuclear counters
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      – TitleFull: Spark protection layers for CMOS pixel anode chips in MPGDs
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              Text: Feb2011
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