View in EDS

C-Sb Materials as Candidate for Phase-Change Memory.

Saved in:
Bibliographic Details
Title: C-Sb Materials as Candidate for Phase-Change Memory.
Authors: Chang, Chih-Chung1, Chang, Po-Chin2, Kao, Kin-Fu2, Yew, Tri-Rung2, Tsai, Ming-Jinn3, Chin, Tsung-Shune4
Source: IEEE Transactions on Magnetics. 03/01/2011, Vol. 47 Issue 3, p645-648. 4p.
Subjects: Phase transitions, Crystallization, Amorphous substances, Electric resistance, Thin films, Activation (Chemistry), Chemical kinetics, X-ray diffraction, Computer storage devices
Abstract: We studied crystallization behaviors of amorphous C-Sb films to evaluate their applicability in phase-change memory. C-Sb thin-films with 92 to 50 at% Sb were deposited by co-sputtering from elemental targets. In-situ electrical resistance-temperature measurement, differential thermal analysis, and grazing-incident X-ray diffraction were applied in this work. Kinetics of crystallization was explored using Kissinger's non-isothermal method and Arrhenius' isothermal method, respectively. As-deposited C-Sb films are amorphous whose electrical resistance decreases as increasing temperature with a 4 to 3 orders-of-magnitude drop at the crystallization temperature. The crystallization temperature increases from 263 to 275 ^\circC as Sb content decreases from 90 to 83 at%. The melting temperature remains almost unchanged, 624 ^\circC, denoting the melting of Sb. The activation energy of crystallization increases from 3.37 eV (90 at% Sb) to 3.88 eV (83% Sb). Structure of C-Sb films after full crystallization belongs to \ssr R\overline\ssr 3m Sb phase. The temperature corresponding to 10-year data-retention of 87 at% Sb films is 168 ^\circC. Electrical switching characterized using a memory-device made of 87 at% Sb film works smoothly at voltages with 50 ns pulse-width, set at 1.1 V and reset at 2.8 V. Binary C-Sb materials, being compatible with CMOS processing, are predicted to be promising candidates for use as phase-change memory. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Magnetics is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:We studied crystallization behaviors of amorphous C-Sb films to evaluate their applicability in phase-change memory. C-Sb thin-films with 92 to 50 at% Sb were deposited by co-sputtering from elemental targets. In-situ electrical resistance-temperature measurement, differential thermal analysis, and grazing-incident X-ray diffraction were applied in this work. Kinetics of crystallization was explored using Kissinger's non-isothermal method and Arrhenius' isothermal method, respectively. As-deposited C-Sb films are amorphous whose electrical resistance decreases as increasing temperature with a 4 to 3 orders-of-magnitude drop at the crystallization temperature. The crystallization temperature increases from 263 to 275 ^\circC as Sb content decreases from 90 to 83 at%. The melting temperature remains almost unchanged, 624 ^\circC, denoting the melting of Sb. The activation energy of crystallization increases from 3.37 eV (90 at% Sb) to 3.88 eV (83% Sb). Structure of C-Sb films after full crystallization belongs to \ssr R\overline\ssr 3m Sb phase. The temperature corresponding to 10-year data-retention of 87 at% Sb films is 168 ^\circC. Electrical switching characterized using a memory-device made of 87 at% Sb film works smoothly at voltages with 50 ns pulse-width, set at 1.1 V and reset at 2.8 V. Binary C-Sb materials, being compatible with CMOS processing, are predicted to be promising candidates for use as phase-change memory. [ABSTRACT FROM AUTHOR]
ISSN:00189464
DOI:10.1109/TMAG.2010.2103396