Photomask-optimization model reduces effects of optical aberrations.

Saved in:

Bibliographic Details
Title:	Photomask-optimization model reduces effects of optical aberrations.
Authors:	Wallace, John
Source:	Laser Focus World. Apr2011, Vol. 47 Issue 4, p26-28. 3p.
Subjects:	Lithography techniques, Optical aberrations, Photolithography, Technological innovations, University of Hong Kong
Geographic Terms:	Hong Kong (China), China
Abstract:	The article reports on the improvements made by researchers at the University of Hong Kong in China on the so-called level-set inverse-lithography model. It states that the research group aimed to expand the applications of the approach to other solutions such as optical aberrations. It notes that the photolithographic system is designed with 193 nanometers (nm) wavelength, 10 nm/pixel resolution and 101 x 101 target pattern.
Database:	Engineering Source

Description
Abstract:	The article reports on the improvements made by researchers at the University of Hong Kong in China on the so-called level-set inverse-lithography model. It states that the research group aimed to expand the applications of the approach to other solutions such as optical aberrations. It notes that the photolithographic system is designed with 193 nanometers (nm) wavelength, 10 nm/pixel resolution and 101 x 101 target pattern.
ISSN:	10438092