Photomask-optimization model reduces effects of optical aberrations.
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| Title: | Photomask-optimization model reduces effects of optical aberrations. |
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| Authors: | Wallace, John |
| Source: | Laser Focus World. Apr2011, Vol. 47 Issue 4, p26-28. 3p. |
| Subjects: | Lithography techniques, Optical aberrations, Photolithography, Technological innovations, University of Hong Kong |
| Geographic Terms: | Hong Kong (China), China |
| Abstract: | The article reports on the improvements made by researchers at the University of Hong Kong in China on the so-called level-set inverse-lithography model. It states that the research group aimed to expand the applications of the approach to other solutions such as optical aberrations. It notes that the photolithographic system is designed with 193 nanometers (nm) wavelength, 10 nm/pixel resolution and 101 x 101 target pattern. |
| Database: | Engineering Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 60168178 AccessLevel: 6 PubType: Periodical PubTypeId: serialPeriodical PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Photomask-optimization model reduces effects of optical aberrations. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Wallace%2C+John%22">Wallace, John</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Laser+Focus+World%22">Laser Focus World</searchLink>. Apr2011, Vol. 47 Issue 4, p26-28. 3p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Lithography+techniques%22">Lithography techniques</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+aberrations%22">Optical aberrations</searchLink><br /><searchLink fieldCode="DE" term="%22Photolithography%22">Photolithography</searchLink><br /><searchLink fieldCode="DE" term="%22Technological+innovations%22">Technological innovations</searchLink><br /><searchLink fieldCode="DE" term="%22University+of+Hong+Kong%22">University of Hong Kong</searchLink> – Name: SubjectGeographic Label: Geographic Terms Group: Su Data: <searchLink fieldCode="DE" term="%22Hong+Kong+%28China%29%22">Hong Kong (China)</searchLink><br /><searchLink fieldCode="DE" term="%22China%22">China</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The article reports on the improvements made by researchers at the University of Hong Kong in China on the so-called level-set inverse-lithography model. It states that the research group aimed to expand the applications of the approach to other solutions such as optical aberrations. It notes that the photolithographic system is designed with 193 nanometers (nm) wavelength, 10 nm/pixel resolution and 101 x 101 target pattern. |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=60168178 |
| RecordInfo | BibRecord: BibEntity: Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 26 Subjects: – SubjectFull: Lithography techniques Type: general – SubjectFull: Optical aberrations Type: general – SubjectFull: Photolithography Type: general – SubjectFull: Technological innovations Type: general – SubjectFull: University of Hong Kong Type: general – SubjectFull: Hong Kong (China) Type: general – SubjectFull: China Type: general Titles: – TitleFull: Photomask-optimization model reduces effects of optical aberrations. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Wallace, John IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2011 Type: published Y: 2011 Identifiers: – Type: issn-print Value: 10438092 Numbering: – Type: volume Value: 47 – Type: issue Value: 4 Titles: – TitleFull: Laser Focus World Type: main |
| ResultId | 1 |
