Bibliographic Details
| Title: |
Fabrication and characterization of planar millimetre-wave Schottky diodes exploiting an epitaxial aluminium on GaAs structure. |
| Authors: |
Taskin, T., McKell, H., Mak, L., Missous, M. |
| Source: |
International Journal of Electronics. Apr95, Vol. 78 Issue 4, p607. 11p. |
| Subjects: |
Diodes, Epitaxy |
| Abstract: |
Reports on the fabrication and characterization of planar, millimeter-wave diodes with in situ deposited epitaxial aluminum (Al) Schottky contacts. Self-aligned technique developed to connect the in situ grown epitaxial Al Schottky contacts to the ex situ deposited bonding pads. |
| Database: |
Engineering Source |
