View in EDS

Fabrication and characterization of planar millimetre-wave Schottky diodes exploiting an epitaxial aluminium on GaAs structure.

Saved in:
Bibliographic Details
Title: Fabrication and characterization of planar millimetre-wave Schottky diodes exploiting an epitaxial aluminium on GaAs structure.
Authors: Taskin, T., McKell, H., Mak, L., Missous, M.
Source: International Journal of Electronics. Apr95, Vol. 78 Issue 4, p607. 11p.
Subjects: Diodes, Epitaxy
Abstract: Reports on the fabrication and characterization of planar, millimeter-wave diodes with in situ deposited epitaxial aluminum (Al) Schottky contacts. Self-aligned technique developed to connect the in situ grown epitaxial Al Schottky contacts to the ex situ deposited bonding pads.
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 6577367
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Fabrication and characterization of planar millimetre-wave Schottky diodes exploiting an epitaxial aluminium on GaAs structure.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Taskin%2C+T%2E%22">Taskin, T.</searchLink><br /><searchLink fieldCode="AR" term="%22McKell%2C+H%2E%22">McKell, H.</searchLink><br /><searchLink fieldCode="AR" term="%22Mak%2C+L%2E%22">Mak, L.</searchLink><br /><searchLink fieldCode="AR" term="%22Missous%2C+M%2E%22">Missous, M.</searchLink>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Electronics%22">International Journal of Electronics</searchLink>. Apr95, Vol. 78 Issue 4, p607. 11p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Diodes%22">Diodes</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Reports on the fabrication and characterization of planar, millimeter-wave diodes with in situ deposited epitaxial aluminum (Al) Schottky contacts. Self-aligned technique developed to connect the in situ grown epitaxial Al Schottky contacts to the ex situ deposited bonding pads.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=6577367
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1080/00207219508926194
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 11
        StartPage: 607
    Subjects:
      – SubjectFull: Diodes
        Type: general
      – SubjectFull: Epitaxy
        Type: general
    Titles:
      – TitleFull: Fabrication and characterization of planar millimetre-wave Schottky diodes exploiting an epitaxial aluminium on GaAs structure.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Taskin, T.
      – PersonEntity:
          Name:
            NameFull: McKell, H.
      – PersonEntity:
          Name:
            NameFull: Mak, L.
      – PersonEntity:
          Name:
            NameFull: Missous, M.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr95
              Type: published
              Y: 1995
          Identifiers:
            – Type: issn-print
              Value: 00207217
          Numbering:
            – Type: volume
              Value: 78
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: International Journal of Electronics
              Type: main
ResultId 1