Parameters of the energy spectrum for holes in CuInSe2.

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Bibliographic Details
Title:	Parameters of the energy spectrum for holes in CuInSe2.
Authors:	Gorley, P. M.¹, Prokopenko, I. V.², Galochkina, O. O.¹, Horley, P. P.^1,3, Vorobiev, Yu. V.⁴, González-Hernández, J.⁵
Source:	Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009, Vol. 12 Issue 3, p302-308. 7p.
Subjects:	Parameter estimation, Copper alloys, Indium selenide, Dispersion relations, Metal crystals, Mathematical models, Temperature effect
Abstract:	This paper reports the coefficients CA,B for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in p-CuInSe2 crystals. We also obtained the tensor components for the carrier effective masses Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe2 allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K. [ABSTRACT FROM AUTHOR]
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Database:	Engineering Source

Description
Abstract:	This paper reports the coefficients CA,B for the k-linear term in dispersion relation E(k) for holes of the upper valence bands Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. and Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in p-CuInSe2 crystals. We also obtained the tensor components for the carrier effective masses Due to image rights restrictions, multiple line equation(s) cannot be graphically displayed. in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe2 allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K. [ABSTRACT FROM AUTHOR]
ISSN:	15608034