Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals.
Saved in:
| Title: | Degradation Processes in the Aluminum–Silicon System Induced by Pulsed Electric Signals. |
|---|---|
| Authors: | Skvortsov, A. A., Orlov, A. M., Salanov, A. A. |
| Source: | Technical Physics Letters. Oct2001, Vol. 27 Issue 10, p834. 4p. |
| Subjects: | Metallizing, Electricity, Aluminum, Silicon |
| Abstract: | Thermal conditions in a metallization layer deposited onto a single crystal silicon substrate were studied during the passage of single electric pulses with a current density of j = (1-8) × 10[sup 10] A/m² and a duration of τ = 50-800 µs. Mechanisms of the irreversible degradation in the aluminum-silicon contact under the pulsed current action are established. The degradation is manifested by the contact melting and the metallization layer fusion. Methods for the identification of these phenomena and determination of the critical current densities j[sub k] are proposed. The critical current density depends on the current pulse duration as described by the relationship j[sub k] ∼ 1/[sup 4]√τ. It is established that the passage of single current pulses with j ≥ 5 × 10[sup 10] A/m² and τ ≥ 200 µs leads to the formation of linear defects in the region of maximum temperature gradient in the test structure. [ABSTRACT FROM AUTHOR] |
| Copyright of Technical Physics Letters is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
Be the first to leave a comment!
