View in EDS

Enthalpy based modeling of pulsed excimer laser annealing for process simulation

Saved in:
Bibliographic Details
Title: Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Authors: Hackenberg, M.1 moritz.hackenberg@iisb.fraunhofer.de, Pichler, P.1,2, Huet, K.3, Negru, R.3, Venturini, J.3, Pakfar, A.4, Tavernier, C.4, La Magna, A.5
Source: Applied Surface Science. Sep2012, Vol. 258 Issue 23, p9347-9351. 5p.
Subjects: Enthalpy, Excimer lasers, Annealing of crystals, Simulation methods & models, Computer-aided design, Silicon crystals, Phase equilibrium
Abstract: Abstract: We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150ns and a wavelength of 308nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of laser energy density fluctuations on the melt depth. [Copyright &y& Elsevier]
Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Abstract: We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150ns and a wavelength of 308nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of laser energy density fluctuations on the melt depth. [Copyright &y& Elsevier]
ISSN:01694332
DOI:10.1016/j.apsusc.2012.01.130