Enthalpy based modeling of pulsed excimer laser annealing for process simulation
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| Title: | Enthalpy based modeling of pulsed excimer laser annealing for process simulation |
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| Authors: | Hackenberg, M.1 moritz.hackenberg@iisb.fraunhofer.de, Pichler, P.1,2, Huet, K.3, Negru, R.3, Venturini, J.3, Pakfar, A.4, Tavernier, C.4, La Magna, A.5 |
| Source: | Applied Surface Science. Sep2012, Vol. 258 Issue 23, p9347-9351. 5p. |
| Subjects: | Enthalpy, Excimer lasers, Annealing of crystals, Simulation methods & models, Computer-aided design, Silicon crystals, Phase equilibrium |
| Abstract: | Abstract: We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150ns and a wavelength of 308nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of laser energy density fluctuations on the melt depth. [Copyright &y& Elsevier] |
| Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 78278218 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Enthalpy based modeling of pulsed excimer laser annealing for process simulation – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Hackenberg%2C+M%2E%22">Hackenberg, M.</searchLink><relatesTo>1</relatesTo><i> moritz.hackenberg@iisb.fraunhofer.de</i><br /><searchLink fieldCode="AR" term="%22Pichler%2C+P%2E%22">Pichler, P.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Huet%2C+K%2E%22">Huet, K.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Negru%2C+R%2E%22">Negru, R.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Venturini%2C+J%2E%22">Venturini, J.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Pakfar%2C+A%2E%22">Pakfar, A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Tavernier%2C+C%2E%22">Tavernier, C.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22La+Magna%2C+A%2E%22">La Magna, A.</searchLink><relatesTo>5</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Surface+Science%22">Applied Surface Science</searchLink>. Sep2012, Vol. 258 Issue 23, p9347-9351. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Enthalpy%22">Enthalpy</searchLink><br /><searchLink fieldCode="DE" term="%22Excimer+lasers%22">Excimer lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Annealing+of+crystals%22">Annealing of crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Computer-aided+design%22">Computer-aided design</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+equilibrium%22">Phase equilibrium</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: We present an enthalpy-based model for pulsed excimer laser annealing of crystalline silicon in the melting regime that integrates into the technology computer-aided design (TCAD) suite Sentaurus Process of Synopsys. The currently one-dimensional model includes laser absorption, a transient simulation of the heat flux, melting of the surface layer, and undercooling during recrystallization. To verify the model, its predictions for a laser pulse with a duration of ∼150ns and a wavelength of 308nm were compared to those of a phase-field implementation of melting laser annealing by La Magna et al. The two models show a good agreement for the melt depth, melt duration, and melt front dynamics. In a second step, model predictions were compared to melt depths extracted from SIMS measurements of ion implanted and excimer-laser-annealed silicon samples. They were found to agree within the experimental error. Variation of the beam parameters indicated a strong influence of laser energy density fluctuations on the melt depth. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Applied Surface Science is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.apsusc.2012.01.130 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 9347 Subjects: – SubjectFull: Enthalpy Type: general – SubjectFull: Excimer lasers Type: general – SubjectFull: Annealing of crystals Type: general – SubjectFull: Simulation methods & models Type: general – SubjectFull: Computer-aided design Type: general – SubjectFull: Silicon crystals Type: general – SubjectFull: Phase equilibrium Type: general Titles: – TitleFull: Enthalpy based modeling of pulsed excimer laser annealing for process simulation Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Hackenberg, M. – PersonEntity: Name: NameFull: Pichler, P. – PersonEntity: Name: NameFull: Huet, K. – PersonEntity: Name: NameFull: Negru, R. – PersonEntity: Name: NameFull: Venturini, J. – PersonEntity: Name: NameFull: Pakfar, A. – PersonEntity: Name: NameFull: Tavernier, C. – PersonEntity: Name: NameFull: La Magna, A. IsPartOfRelationships: – BibEntity: Dates: – D: 15 M: 09 Text: Sep2012 Type: published Y: 2012 Identifiers: – Type: issn-print Value: 01694332 Numbering: – Type: volume Value: 258 – Type: issue Value: 23 Titles: – TitleFull: Applied Surface Science Type: main |
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