Bibliographic Details
| Title: |
Pulsed KrF excimer laser annealing of silicon solar cell |
| Authors: |
Azuma, H.1 e0444@mosk.tytlabs.co.jp, Takeuchi, A.1, Ito, T.1, Fukushima, H.1, Motohiro, T.1, Yamaguchi, M.2 |
| Source: |
Solar Energy Materials & Solar Cells. Oct2002, Vol. 74 Issue 1-4, p289. 6p. |
| Subjects: |
Excimer lasers, Solar cells |
| Abstract: |
The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
