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Pulsed KrF excimer laser annealing of silicon solar cell

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Title: Pulsed KrF excimer laser annealing of silicon solar cell
Authors: Azuma, H.1 e0444@mosk.tytlabs.co.jp, Takeuchi, A.1, Ito, T.1, Fukushima, H.1, Motohiro, T.1, Yamaguchi, M.2
Source: Solar Energy Materials & Solar Cells. Oct2002, Vol. 74 Issue 1-4, p289. 6p.
Subjects: Excimer lasers, Solar cells
Abstract: The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing. [Copyright &y& Elsevier]
Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 7861656
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Pulsed KrF excimer laser annealing of silicon solar cell
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  Data: <searchLink fieldCode="AR" term="%22Azuma%2C+H%2E%22">Azuma, H.</searchLink><relatesTo>1</relatesTo><i> e0444@mosk.tytlabs.co.jp</i><br /><searchLink fieldCode="AR" term="%22Takeuchi%2C+A%2E%22">Takeuchi, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ito%2C+T%2E%22">Ito, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fukushima%2C+H%2E%22">Fukushima, H.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Motohiro%2C+T%2E%22">Motohiro, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Yamaguchi%2C+M%2E%22">Yamaguchi, M.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solar+Energy+Materials+%26+Solar+Cells%22">Solar Energy Materials & Solar Cells</searchLink>. Oct2002, Vol. 74 Issue 1-4, p289. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Excimer+lasers%22">Excimer lasers</searchLink><br /><searchLink fieldCode="DE" term="%22Solar+cells%22">Solar cells</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solar Energy Materials & Solar Cells is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/S0927-0248(02)00087-9
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 289
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        Type: general
      – SubjectFull: Solar cells
        Type: general
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      – TitleFull: Pulsed KrF excimer laser annealing of silicon solar cell
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            NameFull: Azuma, H.
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            NameFull: Takeuchi, A.
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            NameFull: Fukushima, H.
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            – D: 01
              M: 10
              Text: Oct2002
              Type: published
              Y: 2002
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              Value: 74
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