Kerr-like nonlinear mode converters for integrated optic device applications

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Bibliographic Details
Title: Kerr-like nonlinear mode converters for integrated optic device applications
Authors: Burger, Johan P. j.p.burger@its.tudelft.nl, Dubovitsky, Serge1, Steier, William H.1
Source: Optics Communications. Nov2002, Vol. 212 Issue 4-6, p251. 16p.
Subjects: Nonlinear optics, Optical phase conjugation, Signal processing, Integrated optics
Abstract: An integrated optic structure is proposed in order to make Kerr-like nonlinear interactions practical for optical signal processing applications. The interacting electric fields propagates as different modes of a multimode waveguide, and couple to each other or cause a nonlinear cross-gain or cross-phase modulation through the nonlinear dielectric permittivity perturbation caused by the propagating fields. Integrated optic mode combiners/mode splitters provide a way to spatially separate/combine the interacting fields, negating the need for spectral filtering in nonlinear interactions like four-wave mixing. This concept is applicable to all types of Kerr-like materials, but is particularly attractive for realizing novel devices, based on the large carrier nonlinearities in semiconductors. [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:An integrated optic structure is proposed in order to make Kerr-like nonlinear interactions practical for optical signal processing applications. The interacting electric fields propagates as different modes of a multimode waveguide, and couple to each other or cause a nonlinear cross-gain or cross-phase modulation through the nonlinear dielectric permittivity perturbation caused by the propagating fields. Integrated optic mode combiners/mode splitters provide a way to spatially separate/combine the interacting fields, negating the need for spectral filtering in nonlinear interactions like four-wave mixing. This concept is applicable to all types of Kerr-like materials, but is particularly attractive for realizing novel devices, based on the large carrier nonlinearities in semiconductors. [Copyright &y& Elsevier]
ISSN:00304018
DOI:10.1016/S0030-4018(02)01957-0