Bibliographic Details
| Title: |
Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel. |
| Authors: |
Liu, Li-Jung1, Chang-Liao, Kuei-Shu1, Jian, Yi-Chuen1, Cheng, Jen-Wei1, Wang, Tien-Ko1, Tsai, Ming-Jinn2 |
| Source: |
IEEE Electron Device Letters. Sep2012, Vol. 33 Issue 9, p1264-1266. 3p. |
| Subjects: |
Computer programming, Magnetic memory (Computers), Silicon germanium integrated circuits, Logic circuits, Nonvolatile memory, Atomic layer deposition, Electrons |
| Abstract: |
The operation characteristics of p-channel \TaN/\break\Al2\O3/\HfO2/\HfAlO2/\SiO2/\Si MAHOS-type nonvolatile memory devices with different Ge contents in a SiGe buried channel are investigated in this letter. Compared with those of a device having a conventional Si-channel, both programming and erasing speeds are significantly improved by employing a \Si0.7\Ge0.3 buried channel. Satisfactory retention and excellent endurance characteristics up to \10^6\ \P/E cycles with 4.1-V memory window show that the degradation on reliability properties, if it exists, is negligible when the SiGe buried channel is introduced. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
