Charge carrier transport in solid state crystallized poly-Si films on glass
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| Title: | Charge carrier transport in solid state crystallized poly-Si films on glass |
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| Authors: | Scheller, L.-P., Nickel, N.H. nickel@helmholtz-berlin.de |
| Source: | Journal of Non-Crystalline Solids. Sep2012, Vol. 358 Issue 17, p2057-2059. 3p. |
| Subjects: | Silicon films, Crystallization, Solid state chemistry, Glass, Substrates (Materials science), Temperature effect, Charge transfer |
| Abstract: | Abstract: The influence of the used substrate and the deposition temperature, T d , of the amorphous starting material on the transport properties of solid state crystallized poly-Si is investigated. For poly-Si on a-SiN X :H coated borofloat glass a very small free-carrier concentration that is independent of T d is observed and charge transport is governed by intra-grain scattering mechanisms. For poly-Si on Corning glass the carrier concentration exhibits an inverted U shape as T d increases. These samples exhibit activated behavior of the Hall mobility that is consistent with thermionic carrier emission over potential barriers. [Copyright &y& Elsevier] |
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| Database: | Engineering Source |
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