Bibliographic Details
| Title: |
Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires. |
| Authors: |
Li-Wei Chou1, Naechul Shin1, Sivaram, Saujan V.1, Filler, Michael A.1 michael.filler@chbe.gatech.edu |
| Source: |
Journal of the American Chemical Society. 10/3/2012, Vol. 134 Issue 39, p16155-16158. 4p. |
| Subjects: |
Surface plasmon resonance, Silicon nanowires, Infrared absorption, Doping agents (Chemistry), Optical properties of silicon |
| Abstract: |
We observe and systematically tune an intense mid-infrared absorption mode that results from phosphorus doping in silicon nanowires synthesized via the vapor-liquid-solid technique. The angle- and shape-dependence of this spectral feature, as determined via in-situ transmission infrared spectroscopy, supports its assignment as a longitudinal localized surface plasmon resonance (LSPR). Modulation of resonant frequency (740-1620 cm-1) is accomplished by varying nanowire length (135-1160 nm). The observed frequency shift is consistent with Mie-Gans theory, which indicates electrically active dopant concentrations between 1019 and 1020 cm-3. Our findings suggest new opportunities to confine light in this ubiquitous semiconductor and engineer the optical properties of nontraditional plasmonic materials. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
