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Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires.

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Title: Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires.
Authors: Li-Wei Chou1, Naechul Shin1, Sivaram, Saujan V.1, Filler, Michael A.1 michael.filler@chbe.gatech.edu
Source: Journal of the American Chemical Society. 10/3/2012, Vol. 134 Issue 39, p16155-16158. 4p.
Subjects: Surface plasmon resonance, Silicon nanowires, Infrared absorption, Doping agents (Chemistry), Optical properties of silicon
Abstract: We observe and systematically tune an intense mid-infrared absorption mode that results from phosphorus doping in silicon nanowires synthesized via the vapor-liquid-solid technique. The angle- and shape-dependence of this spectral feature, as determined via in-situ transmission infrared spectroscopy, supports its assignment as a longitudinal localized surface plasmon resonance (LSPR). Modulation of resonant frequency (740-1620 cm-1) is accomplished by varying nanowire length (135-1160 nm). The observed frequency shift is consistent with Mie-Gans theory, which indicates electrically active dopant concentrations between 1019 and 1020 cm-3. Our findings suggest new opportunities to confine light in this ubiquitous semiconductor and engineer the optical properties of nontraditional plasmonic materials. [ABSTRACT FROM AUTHOR]
Copyright of Journal of the American Chemical Society is the property of American Chemical Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires.
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  Data: <searchLink fieldCode="AR" term="%22Li-Wei+Chou%22">Li-Wei Chou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Naechul+Shin%22">Naechul Shin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sivaram%2C+Saujan+V%2E%22">Sivaram, Saujan V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Filler%2C+Michael+A%2E%22">Filler, Michael A.</searchLink><relatesTo>1</relatesTo><i> michael.filler@chbe.gatech.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+American+Chemical+Society%22">Journal of the American Chemical Society</searchLink>. 10/3/2012, Vol. 134 Issue 39, p16155-16158. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Surface+plasmon+resonance%22">Surface plasmon resonance</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nanowires%22">Silicon nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Infrared+absorption%22">Infrared absorption</searchLink><br /><searchLink fieldCode="DE" term="%22Doping+agents+%28Chemistry%29%22">Doping agents (Chemistry)</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties+of+silicon%22">Optical properties of silicon</searchLink>
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  Label: Abstract
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  Data: We observe and systematically tune an intense mid-infrared absorption mode that results from phosphorus doping in silicon nanowires synthesized via the vapor-liquid-solid technique. The angle- and shape-dependence of this spectral feature, as determined via in-situ transmission infrared spectroscopy, supports its assignment as a longitudinal localized surface plasmon resonance (LSPR). Modulation of resonant frequency (740-1620 cm-1) is accomplished by varying nanowire length (135-1160 nm). The observed frequency shift is consistent with Mie-Gans theory, which indicates electrically active dopant concentrations between 1019 and 1020 cm-3. Our findings suggest new opportunities to confine light in this ubiquitous semiconductor and engineer the optical properties of nontraditional plasmonic materials. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Group: Ab
  Data: <i>Copyright of Journal of the American Chemical Society is the property of American Chemical Society and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1021/ja3075902
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        Text: English
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      – SubjectFull: Surface plasmon resonance
        Type: general
      – SubjectFull: Silicon nanowires
        Type: general
      – SubjectFull: Infrared absorption
        Type: general
      – SubjectFull: Doping agents (Chemistry)
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      – SubjectFull: Optical properties of silicon
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      – TitleFull: Tunable Mid-Infrared Localized Surface Plasmon Resonances in Silicon Nanowires.
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              Text: 10/3/2012
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