Bibliographic Details
| Title: |
Nanostructure, optical and photoluminescence properties of ZnNiO nanoclusters by co-precipitation method. |
| Authors: |
Gopalakrishnan, R.1, Muthukumaran, S.2 drsmk123@yahoo.co.in |
| Source: |
Journal of Materials Science: Materials in Electronics. Apr2013, Vol. 24 Issue 4, p1069-1080. 12p. |
| Subjects: |
Micrographics, X-ray diffraction, Electrons, Infrared spectroscopy, Optoelectronic devices |
| Abstract: |
ZnNiO (x = 0, 0.01, 0.02, 0.03, 0.04 and 0.05) nanoclusters have been successfully synthesized by co-precipitation method. The synthesized samples have been characterized by powder X-ray diffraction, energy dispersive X-ray spectra, UV-visible spectrophotometer and Fourier transform infrared spectroscopy. The XRD and SEM measurements reveal that the prepared undoped and Ni-doped nanoclusters have different microstructure without changing a hexagonal wurtzite structure. The calculated average crystalline size from XRD measurement decreases from 37.5 to 26.6 nm for x = 0 to 0.05 which was confirmed by SEM micrographs. The change in lattice parameters, micro-strain, shift of XRD peaks and the blue shift of energy gap from 3.18 to 3.33 eV (ΔE = 0.15 eV) for Ni = 0-0.02 and red shift of E from 3.33 to 3.14 eV (ΔE = 0.19 eV) for Ni = 0.02 to 0.05 reveal the substitution of Ni ions into Zn-O lattice. The presence of functional groups and the chemical bonding are confirmed by FTIR spectra. The shift of NBE UV emission between 374 and 395 nm, the shift of green band emission between 517 and 531 nm, the change in intensity and the broadening effect in the photoluminescence spectra confirms the substitution of Ni ions into the Zn-O lattice. Ni-doped ZnO system shows a great pledge for the fabrication of nano-optoelectronic devices like tunable light emitting diode in the near future. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |