Bibliographic Details
| Title: |
Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection |
| Authors: |
Liu, Li-Jung1, Chang-Liao, Kuei-Shu1 Lkschang@ess.nthu.edu.tw, Jian, Yi-Chuen1, Wang, Tien-Ko1, Tsai, Ming-Jinn2 |
| Source: |
Thin Solid Films. Apr2013, Vol. 533, p1-4. 4p. |
| Subjects: |
Flash memory, Quantum tunneling, Hot carriers, Superlattices, Silicon, Germanium, Crystal structure |
| Abstract: |
Abstract: P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 3.8V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
