View in EDS

Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

Saved in:
Bibliographic Details
Title: Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
Authors: Liu, Li-Jung1, Chang-Liao, Kuei-Shu1 Lkschang@ess.nthu.edu.tw, Jian, Yi-Chuen1, Wang, Tien-Ko1, Tsai, Ming-Jinn2
Source: Thin Solid Films. Apr2013, Vol. 533, p1-4. 4p.
Subjects: Flash memory, Quantum tunneling, Hot carriers, Superlattices, Silicon, Germanium, Crystal structure
Abstract: Abstract: P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 3.8V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. [Copyright &y& Elsevier]
Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 86920570
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Liu%2C+Li-Jung%22">Liu, Li-Jung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><i> Lkschang@ess.nthu.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Jian%2C+Yi-Chuen%22">Jian, Yi-Chuen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Tien-Ko%22">Wang, Tien-Ko</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsai%2C+Ming-Jinn%22">Tsai, Ming-Jinn</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Thin+Solid+Films%22">Thin Solid Films</searchLink>. Apr2013, Vol. 533, p1-4. 4p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Quantum+tunneling%22">Quantum tunneling</searchLink><br /><searchLink fieldCode="DE" term="%22Hot+carriers%22">Hot carriers</searchLink><br /><searchLink fieldCode="DE" term="%22Superlattices%22">Superlattices</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+structure%22">Crystal structure</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Abstract: P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 106 P/E cycles with 3.8V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Thin Solid Films is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=86920570
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.tsf.2012.11.115
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 1
    Subjects:
      – SubjectFull: Flash memory
        Type: general
      – SubjectFull: Quantum tunneling
        Type: general
      – SubjectFull: Hot carriers
        Type: general
      – SubjectFull: Superlattices
        Type: general
      – SubjectFull: Silicon
        Type: general
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Crystal structure
        Type: general
    Titles:
      – TitleFull: Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Liu, Li-Jung
      – PersonEntity:
          Name:
            NameFull: Chang-Liao, Kuei-Shu
      – PersonEntity:
          Name:
            NameFull: Jian, Yi-Chuen
      – PersonEntity:
          Name:
            NameFull: Wang, Tien-Ko
      – PersonEntity:
          Name:
            NameFull: Tsai, Ming-Jinn
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 30
              M: 04
              Text: Apr2013
              Type: published
              Y: 2013
          Identifiers:
            – Type: issn-print
              Value: 00406090
          Numbering:
            – Type: volume
              Value: 533
          Titles:
            – TitleFull: Thin Solid Films
              Type: main
ResultId 1