Bibliographic Details
| Title: |
Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel. |
| Authors: |
Liu, Li-Jung1, Chang-Liao, Kuei-Shu1, Jian, Yi-Chuen1, Cheng, Jen-Wei1, Wang, Tien-Ko1, Tsai, Ming-Jinn2 |
| Source: |
IEEE Electron Device Letters. May2013, Vol. 34 Issue 5, p587-589. 3p. |
| Subjects: |
Epitaxy, Ferroelectric RAM, Aluminum oxide, Atomic layer deposition, Crystal structure, Thermal stability, Reliability in engineering |
| Abstract: |
Operation characteristics of p-channel TaN/Al2O3/HfO2/HfAlO2/SiO2/Si MAHOS-type nonvolatile memory devices with an epitaxial Si/Ge super-lattice (SL) channel are investigated in this letter, where the SL channel is characterized with good crystal structure and high thermal stability. Remarkable improvement on programming and erasing speeds is observed, as compared to those with SiGe channel. Furthermore, the degradation on reliability properties of retention and endurance is negligible for the device with employing a SL channel. [ABSTRACT FROM PUBLISHER] |
|
Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |
