Bibliographic Details
| Title: |
ZnO/Silicon Nanowire Hybrids Extended-Gate Field-Effect Transistors as pH Sensors. |
| Authors: |
Bohr-Ran Huang1 huangbr@mail.ntust.edu.tw, Jun-Cheng Lin1, Ying-Kan Yang1 |
| Source: |
Journal of The Electrochemical Society. 2013, Vol. 160 Issue 6, pB78-B82. 5p. |
| Subjects: |
Silicon nanowires, Zinc oxide, Nanowires, Field-effect transistors, Nanostructured materials |
| Abstract: |
A new type of zinc oxide/silicon nanowire (ZnO/SiNW) hybrid is developed for use in an extended-gate field-effect transistor (EGFET) for pH sensors. SiNWs are first formed using the Ag-assisted electroless etching technique and are then covered with ZnO nanostructures through a combination of sol-gel and hydrothermal processes. The ZnO nanostructures were synthesized at 90°C for 3 h using precursor solutions with molar concentrations of 10 mM and 25 mM. The ZnO nanostructures provide a larger surface area than the pristine SiNWs for adsorbing additional H+ and OH- ions, along with increased oxygen-related binding to effectively sense H+ ions in the acid solution region. The 25 mM ZnO/SiNW sensors exhibited higher sensitivity (66 mV/pH) than pristine SiNW sensors (52 mV/pH). This simple and low-cost sensing device can be applied in disposable biosensors. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
