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ZnO/Silicon Nanowire Hybrids Extended-Gate Field-Effect Transistors as pH Sensors.

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Title: ZnO/Silicon Nanowire Hybrids Extended-Gate Field-Effect Transistors as pH Sensors.
Authors: Bohr-Ran Huang1 huangbr@mail.ntust.edu.tw, Jun-Cheng Lin1, Ying-Kan Yang1
Source: Journal of The Electrochemical Society. 2013, Vol. 160 Issue 6, pB78-B82. 5p.
Subjects: Silicon nanowires, Zinc oxide, Nanowires, Field-effect transistors, Nanostructured materials
Abstract: A new type of zinc oxide/silicon nanowire (ZnO/SiNW) hybrid is developed for use in an extended-gate field-effect transistor (EGFET) for pH sensors. SiNWs are first formed using the Ag-assisted electroless etching technique and are then covered with ZnO nanostructures through a combination of sol-gel and hydrothermal processes. The ZnO nanostructures were synthesized at 90°C for 3 h using precursor solutions with molar concentrations of 10 mM and 25 mM. The ZnO nanostructures provide a larger surface area than the pristine SiNWs for adsorbing additional H+ and OH- ions, along with increased oxygen-related binding to effectively sense H+ ions in the acid solution region. The 25 mM ZnO/SiNW sensors exhibited higher sensitivity (66 mV/pH) than pristine SiNW sensors (52 mV/pH). This simple and low-cost sensing device can be applied in disposable biosensors. [ABSTRACT FROM AUTHOR]
Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 88161296
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PubTypeId: academicJournal
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  Data: ZnO/Silicon Nanowire Hybrids Extended-Gate Field-Effect Transistors as pH Sensors.
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  Data: <searchLink fieldCode="AR" term="%22Bohr-Ran+Huang%22">Bohr-Ran Huang</searchLink><relatesTo>1</relatesTo><i> huangbr@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Jun-Cheng+Lin%22">Jun-Cheng Lin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ying-Kan+Yang%22">Ying-Kan Yang</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+The+Electrochemical+Society%22">Journal of The Electrochemical Society</searchLink>. 2013, Vol. 160 Issue 6, pB78-B82. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon+nanowires%22">Silicon nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructured+materials%22">Nanostructured materials</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A new type of zinc oxide/silicon nanowire (ZnO/SiNW) hybrid is developed for use in an extended-gate field-effect transistor (EGFET) for pH sensors. SiNWs are first formed using the Ag-assisted electroless etching technique and are then covered with ZnO nanostructures through a combination of sol-gel and hydrothermal processes. The ZnO nanostructures were synthesized at 90°C for 3 h using precursor solutions with molar concentrations of 10 mM and 25 mM. The ZnO nanostructures provide a larger surface area than the pristine SiNWs for adsorbing additional H+ and OH- ions, along with increased oxygen-related binding to effectively sense H+ ions in the acid solution region. The 25 mM ZnO/SiNW sensors exhibited higher sensitivity (66 mV/pH) than pristine SiNW sensors (52 mV/pH). This simple and low-cost sensing device can be applied in disposable biosensors. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of The Electrochemical Society is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1149/2.110306jes
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: B78
    Subjects:
      – SubjectFull: Silicon nanowires
        Type: general
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Field-effect transistors
        Type: general
      – SubjectFull: Nanostructured materials
        Type: general
    Titles:
      – TitleFull: ZnO/Silicon Nanowire Hybrids Extended-Gate Field-Effect Transistors as pH Sensors.
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            NameFull: Bohr-Ran Huang
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            NameFull: Jun-Cheng Lin
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            NameFull: Ying-Kan Yang
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            – D: 01
              M: 06
              Text: 2013
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              Y: 2013
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