A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.

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Title:	A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.
Authors:	Marchenko, A.¹, Anisimova, N.¹, Naletko, A.¹, Rabchanova, T.¹, Seregin, P.¹ ppseregin@mail.ru, Ali, H.²
Source:	Glass Physics & Chemistry. May2013, Vol. 39 Issue 3, p287-293. 7p.
Subjects:	Tin isotopes, Tin compounds, Impurity-dislocation interactions, Amorphous silicon, Mössbauer spectroscopy, Atoms, Crystallography
Abstract:	Using the Mössbauer spectroscopy method for the Sn isotope the state of tin impurity atoms in crystalline c-Si and amorphous a-Si silicon is studied. If tin concentration in c-Si does not exceed 2 × 10 atoms/cm then tin enters the lattice as substitutional impurity forming sp hybrid system of chemical bonds. There is discussed a model that describes tin impurity atom as an isotopic impurity. If tin concentration in c-Si exceeds the value, associates of tin impurity atoms are formed in the structure of the doped semiconductor. There are studied the electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms becomes charged. [ABSTRACT FROM AUTHOR]
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Abstract:	Using the Mössbauer spectroscopy method for the Sn isotope the state of tin impurity atoms in crystalline c-Si and amorphous a-Si silicon is studied. If tin concentration in c-Si does not exceed 2 × 10 atoms/cm then tin enters the lattice as substitutional impurity forming sp hybrid system of chemical bonds. There is discussed a model that describes tin impurity atom as an isotopic impurity. If tin concentration in c-Si exceeds the value, associates of tin impurity atoms are formed in the structure of the doped semiconductor. There are studied the electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms becomes charged. [ABSTRACT FROM AUTHOR]
ISSN:	10876596
DOI:	10.1134/S1087659613030127