Bibliographic Details
| Title: |
Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors. |
| Authors: |
Fan, Ching-Lin1,2 clfan@mail.ntust.edu.tw, Lin, Yu-Zuo1, Chiu, Ping-Cheng1, Wang, Shea-Jue3, Lee, Win-Der4 |
| Source: |
Organic Electronics. Sep2013, Vol. 14 Issue 9, p2228-2232. 5p. |
| Subjects: |
Polytef, Bilayers (Solid state physics), Passivation, Silica, Thin film transistors, Organic electronics |
| Abstract: |
Highlights: [•] We propose a bilayer passivation using a Teflon and SiO2 combination layer for OTFTs. [•] Teflon has good compatibility with the underlying pentacene channel layer. [•] Teflon can also protect OTFTs from plasma damage during the SiO2 passivation process. [•] After passivation, the moisture effect on the OTFTs reliability was greatly improved. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
