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Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors.

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Title: Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors.
Authors: Fan, Ching-Lin1,2 clfan@mail.ntust.edu.tw, Lin, Yu-Zuo1, Chiu, Ping-Cheng1, Wang, Shea-Jue3, Lee, Win-Der4
Source: Organic Electronics. Sep2013, Vol. 14 Issue 9, p2228-2232. 5p.
Subjects: Polytef, Bilayers (Solid state physics), Passivation, Silica, Thin film transistors, Organic electronics
Abstract: Highlights: [•] We propose a bilayer passivation using a Teflon and SiO2 combination layer for OTFTs. [•] Teflon has good compatibility with the underlying pentacene channel layer. [•] Teflon can also protect OTFTs from plasma damage during the SiO2 passivation process. [•] After passivation, the moisture effect on the OTFTs reliability was greatly improved. [ABSTRACT FROM AUTHOR]
Copyright of Organic Electronics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 89137228
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Teflon/SiO<subscript>2</subscript> bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors.
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  Data: <searchLink fieldCode="AR" term="%22Fan%2C+Ching-Lin%22">Fan, Ching-Lin</searchLink><relatesTo>1,2</relatesTo><i> clfan@mail.ntust.edu.tw</i><br /><searchLink fieldCode="AR" term="%22Lin%2C+Yu-Zuo%22">Lin, Yu-Zuo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chiu%2C+Ping-Cheng%22">Chiu, Ping-Cheng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Shea-Jue%22">Wang, Shea-Jue</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Lee%2C+Win-Der%22">Lee, Win-Der</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Organic+Electronics%22">Organic Electronics</searchLink>. Sep2013, Vol. 14 Issue 9, p2228-2232. 5p.
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  Data: <searchLink fieldCode="DE" term="%22Polytef%22">Polytef</searchLink><br /><searchLink fieldCode="DE" term="%22Bilayers+%28Solid+state+physics%29%22">Bilayers (Solid state physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br /><searchLink fieldCode="DE" term="%22Silica%22">Silica</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Organic+electronics%22">Organic electronics</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Highlights: [•] We propose a bilayer passivation using a Teflon and SiO2 combination layer for OTFTs. [•] Teflon has good compatibility with the underlying pentacene channel layer. [•] Teflon can also protect OTFTs from plasma damage during the SiO2 passivation process. [•] After passivation, the moisture effect on the OTFTs reliability was greatly improved. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Organic Electronics is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.orgel.2013.05.031
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 2228
    Subjects:
      – SubjectFull: Polytef
        Type: general
      – SubjectFull: Bilayers (Solid state physics)
        Type: general
      – SubjectFull: Passivation
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      – SubjectFull: Silica
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      – SubjectFull: Thin film transistors
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      – SubjectFull: Organic electronics
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      – TitleFull: Teflon/SiO2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors.
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            – D: 01
              M: 09
              Text: Sep2013
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              Y: 2013
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