Bibliographic Details
| Title: |
Influence of La on the electrical properties of HfSiON: From diffusion to V th shifts. |
| Authors: |
Hackenberg, M.1 moritz.hackenberg@iisb.fraunhofer.de, Pichler, P.1,2, Baudot, S.3, Essa, Z.3,4, Gro-Jean, M.3, Tavernier, C.3, Schamm-Chardon, S.5 |
| Source: |
Microelectronic Engineering. Sep2013, Vol. 109, p200-203. 4p. |
| Subjects: |
Lanthanum, Hafnium compounds, Electric properties of metals, Diffusion, Current-voltage characteristics, Secondary ion mass spectrometry, Threshold voltage |
| Abstract: |
Highlights: [•] TiN/HfSiON/SiO2/Substrate stacks were investigated with C–V measurements and SIMS. [•] No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found. [•] A linear relationship of the threshold voltage on the La sheet concentration in the HfSiON was found. [•] Crystallization of the HfSiON is proposed as explanation of the experimental findings. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
