Bibliographic Details
| Title: |
DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation. |
| Authors: |
Moschetti, Giuseppe1 giuseppe.moschetti@chalmers.se, Lefebvre, Eric1,2, Fagerlind, Martin1,3, Nilsson, Per-Åke1, Desplanque, Ludovic4, Wallart, Xavier4, Grahn, Jan1 |
| Source: |
Solid-State Electronics. Sep2013, Vol. 87, p85-89. 5p. |
| Subjects: |
Direct currents, Radio frequency, Indium arsenide, Aluminum antimonide, Oxidation, Silicon nitride |
| Abstract: |
Highlights: [•] An in situ CVD-SiN early-protection is deposited after shallow-mesa etch. [•] Comparison against ex situ SiN-film deposited by reactive sputtering is performed. [•] Improved repeatability and stability to oxidation achieved with the CVD-SiN process. [•] The thicker film allowed by CVD improves pinch-off and gate leakage current. [•] Large improvement of RF and noise performance is also observed at low drain bias. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
