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DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation.

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Title: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation.
Authors: Moschetti, Giuseppe1 giuseppe.moschetti@chalmers.se, Lefebvre, Eric1,2, Fagerlind, Martin1,3, Nilsson, Per-Åke1, Desplanque, Ludovic4, Wallart, Xavier4, Grahn, Jan1
Source: Solid-State Electronics. Sep2013, Vol. 87, p85-89. 5p.
Subjects: Direct currents, Radio frequency, Indium arsenide, Aluminum antimonide, Oxidation, Silicon nitride
Abstract: Highlights: [•] An in situ CVD-SiN early-protection is deposited after shallow-mesa etch. [•] Comparison against ex situ SiN-film deposited by reactive sputtering is performed. [•] Improved repeatability and stability to oxidation achieved with the CVD-SiN process. [•] The thicker film allowed by CVD improves pinch-off and gate leakage current. [•] Large improvement of RF and noise performance is also observed at low drain bias. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 89433926
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN <subscript>x</subscript> -film for early-protection against oxidation.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Moschetti%2C+Giuseppe%22">Moschetti, Giuseppe</searchLink><relatesTo>1</relatesTo><i> giuseppe.moschetti@chalmers.se</i><br /><searchLink fieldCode="AR" term="%22Lefebvre%2C+Eric%22">Lefebvre, Eric</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Fagerlind%2C+Martin%22">Fagerlind, Martin</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Nilsson%2C+Per-Åke%22">Nilsson, Per-Åke</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Desplanque%2C+Ludovic%22">Desplanque, Ludovic</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Wallart%2C+Xavier%22">Wallart, Xavier</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Grahn%2C+Jan%22">Grahn, Jan</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Sep2013, Vol. 87, p85-89. 5p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Direct+currents%22">Direct currents</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency%22">Radio frequency</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+arsenide%22">Indium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Aluminum+antimonide%22">Aluminum antimonide</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+nitride%22">Silicon nitride</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Highlights: [•] An in situ CVD-SiN early-protection is deposited after shallow-mesa etch. [•] Comparison against ex situ SiN-film deposited by reactive sputtering is performed. [•] Improved repeatability and stability to oxidation achieved with the CVD-SiN process. [•] The thicker film allowed by CVD improves pinch-off and gate leakage current. [•] Large improvement of RF and noise performance is also observed at low drain bias. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.sse.2013.06.008
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 85
    Subjects:
      – SubjectFull: Direct currents
        Type: general
      – SubjectFull: Radio frequency
        Type: general
      – SubjectFull: Indium arsenide
        Type: general
      – SubjectFull: Aluminum antimonide
        Type: general
      – SubjectFull: Oxidation
        Type: general
      – SubjectFull: Silicon nitride
        Type: general
    Titles:
      – TitleFull: DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiN x -film for early-protection against oxidation.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Moschetti, Giuseppe
      – PersonEntity:
          Name:
            NameFull: Lefebvre, Eric
      – PersonEntity:
          Name:
            NameFull: Fagerlind, Martin
      – PersonEntity:
          Name:
            NameFull: Nilsson, Per-Åke
      – PersonEntity:
          Name:
            NameFull: Desplanque, Ludovic
      – PersonEntity:
          Name:
            NameFull: Wallart, Xavier
      – PersonEntity:
          Name:
            NameFull: Grahn, Jan
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 09
              Text: Sep2013
              Type: published
              Y: 2013
          Identifiers:
            – Type: issn-print
              Value: 00381101
          Numbering:
            – Type: volume
              Value: 87
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
ResultId 1