Interpretation of non-linear Si p–i–n detector response data to low-Z ions

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Bibliographic Details
Title: Interpretation of non-linear Si p–i–n detector response data to low-Z ions
Authors: Menchaca-Rocha, A. amen@servidor.unam.mx, Alfaro, R.1, Belmont-Moreno, E.1, Martınez-Dávalos, A.1
Source: Nuclear Instruments & Methods in Physics Research Section B. Feb2003, Vol. 201 Issue 2, p426. 5p.
Subjects: Solid state electronics, Ions
Abstract: The remarkable non-linear response of a Si p–i–n detector to relatively low-Z (<26) ions recently reported by Whitlow and Zhang [Nucl. Instr. and Meth. B 190 (2002) 375] is interpreted as charge-collection inefficiencies associated to the recombination occurring in high energy density regions near the particle track. Model calculations taking into account the geometry of the resulting charge-carrier distribution are shown to closely reproduce the data, reducing the calibration exercise from their proposed four parameters per Z, to just three overall quantities, which have a simple physical interpretation. [Copyright &y& Elsevier]
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Abstract:The remarkable non-linear response of a Si p–i–n detector to relatively low-<f>Z</f> (<f><</f>26) ions recently reported by Whitlow and Zhang [Nucl. Instr. and Meth. B 190 (2002) 375] is interpreted as charge-collection inefficiencies associated to the recombination occurring in high energy density regions near the particle track. Model calculations taking into account the geometry of the resulting charge-carrier distribution are shown to closely reproduce the data, reducing the calibration exercise from their proposed four parameters per <f>Z</f>, to just three overall quantities, which have a simple physical interpretation. [Copyright &y& Elsevier]
ISSN:0168583X