Bibliographic Details
| Title: |
Procedure of calculating parameters of sense amplifiers for the EEPROM and flash memory. |
| Authors: |
Vasil'ev, E.1 vaseugser@mail.ru |
| Source: |
Russian Microelectronics. Dec2013, Vol. 42 Issue 7, p414-419. 6p. |
| Subjects: |
Erasable programmable read-only memory, Electronic amplifiers design & construction, Parameters (Statistics), Flash memory, Temperature effect, Electric potential, Complementary metal oxide semiconductors, Nonvolatile memory |
| Abstract: |
Designs of sense amplifiers for the EEPROM and flash memory are considered and their classification and analysis are performed. The variant of the design of the sense amplifier with the best overall parameters in terms of sensitivity; speed of response; and stability against interference, variation in temperature, and supply voltage is selected. The procedure for calculating the parameters of the selected sense amplifier is developed and the results of modeling the amplifier for CMOS 0.18-μm technology are presented. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
